Research Areas

Publication

List of Publications

  • In situ resistivity studies of 200MeV 107Ag14+-ion irradiated n-GaAs epitaxial layers R. Singh, S.K. Arora, J.P. Singh, Renu Tyagi, S.K. Agarwal and D. Kanjilal, Vacuum, Vol. 65 (2002) 39.

  • SEM, STM/STS and heavy ion irradiation studies on magnesium diboride superconductor, H. Narayan, S. B. Samanta, A. Gupta, A. V. Narlikar, R. Kishore, K. N. Sood, D. Kanjilal, T. Muranaka, and J. Akimitsu Physica C 377, (2002) 1.

  • Temperature dependence of 1/f noise in Pd/n-GaAs Schottky barrier diode R. Singh and D. Kanjilal J. Appl. Phys., 91 (2002) 411.

  • Peak effect and its evolution with defect structure in YBCO thin films at microwave frequencies, T. Banerjee, D. Kanjilal and R. Pinto Phys. Rev. B, 65, 174521(2002).

  • Effect of heavy ion irradiation on the electrical and optical properties of amorphous chalcogenide thin films, Manvinder S. Kamboj, G.Kaur, R.Thangaraj and D.K.Avasthi, Physics D: Appl. Phys. 35 (2002) 477.

  • Modifying the nanocrystalline characteristics-structure, size and surface states of copper oxide thin films by high energy heavy irradiation, B. Balamurugan, B.R. Mehta, D.K. Avasthi, Fouran Singh, Akhilesh K. Arora, M. Rajalaxmi, G. Raghavan, A.K. Tyagi, S.M. Shivaprasad. J. App. Phys. 92 (2002) 3304.

  • Influence of ion irradiation on free volume controlled diffusion process in polycarbonate-a positron lifetime study, G. Shariff, P.M. Sathyanarayana, M.C. Thimmegowda, M.B. Ashalata, R. Ramani, D.K. Avasthi and C. Ranganathaiah. Polymer 43 (2002) 2819.

  • Swift heavy ion induced modifications of Co/Si interface; cobalt silicide formation, D. Bhattacharya, S.K. Srivastava, P.K. Sahoo, G. Principee, D. Kabiraj, T. Som, V.N. Kulkarni and D.K. Avasthi, Surface & Coating Technology, 158-159 (2002) 59.

  • Field emission characteristics of high energy ion irradiated polycrystalline diamond thin films, P.T.Pandey, G.L. Sharma, D.K. Avasthi, V.D. Vankar, Vacuum 72(2004)297.

  • Variation of electrical resistance in metallic glasses subjected to 130 MeV 28Si ion irradiation. H. Narayanan, H.M. Agrawal, R.P.S. Kushwaha, V. Ganeshan and D. Kanjilal, Phys. Stat. Sol. (a) 201 (2004) 536.

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